Color centers in wide bandgap semiconductors are attracting broad attention for use as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers’ response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496–700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching with g2(0) ∼ 0.2, and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications.

Optical Tweezer Phonon Laser

Optical spin pumping of color centers promises to revolutionize the practice of nuclear magnetic resonance via efficient dynamic nuclear polarization (DNP) protocols. Significant progress has been attained with systems such as the nitrogen-vacancy (NV) center in diamond, but extreme spectral broadening and nuclear spin-lattice relaxation from co-existing paramagnetic defects are hurdles still difficult to circumvent. The technique we present in this manuscript addresses both issues through the implementation of magnetic-field-sweep-induced NV cross-relaxation with ancilla point defects, here acting as proxies to mediate the transfer of polarization to the nuclear spin ensemble. The governing spin dynamics is robust to field misalignment and ideally suited for shallow NVs, indirectly coupled to outside nuclei through paramagnetic defects at the diamond surface.