09-25: Prof. Roland Nagy visits CCNY and tells us about his group’s work on emitters in SiC PIN diodes.

See details of his presentation below:

Title: Progress in the Realization of Scalable Quantum Memory Nodes in 4H-SiC

Abstract: The vision of a global quantum internet is stalled by a fundamental obstacle in its core components, the quantum memory nodes (QMNs). Leading platforms face a debilitating trade-off: achieving the spectral tunability required for network-wide photon indistinguishability typically comes at the cost of degrading the emitter’s optical coherence and spin-to-photon interface. Resolving this challenge requires a new approach to deterministically control the quantum emitter’s environment.

In this talk, I will present our recent breakthrough in addressing this challenge by demonstrating precise electrical control over single silicon vacancy (VSi) centers in the industrial semiconductor 4H-Silicon Carbide. By embedding VSi centers within a p-i-n diode, we gain simultaneous control over two critical parameters. I will show that the applied electric field enables a wide-range DC Stark shift for deterministic spectral tuning. Crucially, we also demonstrate that the diode’s charge depletion mechanism actively suppresses spectral diffusion, leading to a significant narrowing of the optical linewidth towards the Fourier-transform limit. These results establish a robust, foundational method for engineering arrays of highly coherent and mutually indistinguishable quantum emitters. Finally, I will provide an outlook on how this powerful control technique can be integrated into nanophotonic waveguides, presenting a clear and viable pathway towards a novel hybrid QMN architecture designed to ultimately resolve the key scaling challenges in quantum networking.

Leave a Reply

Your email address will not be published. Required fields are marked *